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| ! "#$%& ' ( )! * +," - ,&&.,".#/ &+ 0 0 !1 + 2 ' , !3 # 41 3 + ,1 ! ! ! " #$ %! & ! ! ' #$ (! ) ) *$$ ) (! +!, ! !! % $-. , (/ " / ##0 1$ 2 3 ! +!, ! !! + $-. , (/ 4"! ( # 3 ( / ' *$$ !5 % !5 $647 $68 47 9! : ! ! +!, ! ) ) + + 1$/ 2 ! 6#6 ) (! !! ) ) / 2 ! 6 (! (! !! + $6/ # 6#$ :! ' ' 6$60 ;< ! "#$ forward voltage 0.1 1 10 100 0 0.4 0.8 1.2 1.6 2 2.4 2.8 S30L60 tc=150 c [max] tc=25 c [max] pulse measurement per diode tc=150 c [typ] tc=25 c [typ] forward voltage v f [v] forward current i f [a] 0 t p i o t d=t p /t 0 10 20 30 40 50 60 0 10 20 30 40 50 S30L60 0.3 forward power dissipation tj = tjmax sin 0.2 0.1 d=0.8 dc 0.5 0.05 average rectified forward current i o [a] forward power dissipation p f [w] 0 t p i o t d=t p /t 0 10 20 30 40 50 0 20 40 60 80 100 120 140 160 S30L60 0.3 derating curve v r = v rm sin 0.2 0.1 d=0.8 dc 0.5 0.05 0 v r case temperature tc [ c] average rectified forward current i o [a] peak surge forward capability 0 200 400 600 800 1 10 100 S30L60 2 5 20 50 i fsm 10ms 10ms 1 cycle number of cycles [cycles] peak surge forward current i fsm [a] non-repetitive, sine wave, tj=25 c before surge current is applied 100 1000 S30L60 1 10 100 0.05 0.5 0.2 20 50 5 2 200 500 2000 5000 0.02 0.05 0.5 0.2 20 5 2 0.005 0.002 junction capacitance reverse voltage v r [v] junction capacitance cj [pf] f=1mhz tc=25 c typ per diode |
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